发明名称 |
SEMICONDUCTOR CONTACT FORMED BY SERIGRAPHY |
摘要 |
The invention relates to the formation of a contact on the surface of a semiconductor body by a serigraphy treatment by depositing a semiconductor paste with an addition of a doping element to increase the concentration of impurities at the surface during a vitrification of the said paste. According to the invention, the method uses a second deposit of a semiconductor paste in the place for soldering a connection which paste comprises no doping element. |
申请公布号 |
CA1123965(A) |
申请公布日期 |
1982.05.18 |
申请号 |
CA19780317578 |
申请日期 |
1978.12.07 |
申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
DIGUET, DANIEL;DAVID, GERARD A.;AUBRIL, PIERRE |
分类号 |
H01L31/04;H01L21/283;H01L21/288;H01L21/60;H01L31/0224 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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