发明名称 SEMICONDUCTOR CONTACT FORMED BY SERIGRAPHY
摘要 The invention relates to the formation of a contact on the surface of a semiconductor body by a serigraphy treatment by depositing a semiconductor paste with an addition of a doping element to increase the concentration of impurities at the surface during a vitrification of the said paste. According to the invention, the method uses a second deposit of a semiconductor paste in the place for soldering a connection which paste comprises no doping element.
申请公布号 CA1123965(A) 申请公布日期 1982.05.18
申请号 CA19780317578 申请日期 1978.12.07
申请人 N.V. PHILIPS'GLOEILAMPENFABRIEKEN 发明人 DIGUET, DANIEL;DAVID, GERARD A.;AUBRIL, PIERRE
分类号 H01L31/04;H01L21/283;H01L21/288;H01L21/60;H01L31/0224 主分类号 H01L31/04
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