| 摘要 |
PURPOSE:To obtain a photo sensor array with a high heat and humidity resistance using non-crystal Si containing 5-25% H as a semiconductor device. CONSTITUTION:An electrode 15 for a blocking diode is made by successively evaporating Cr, Pt on an individual electrode 9 on a glass plate 8. A detector 16 of non-crystal Si of a high resistance is made on the glass plate 8 including the electrode 15. An ohmic connection layer 17 of an n type non-crystal Si is formed on the detector 16 and a common electrode 12 of In2O3 is attached. In this construction, non-crystal Si containing 5-25% of H is used for the detector 16 and for the ohmic connection layer 17. A Schottky barrier is formed between the layer 15 and the layer 16 and the blocking diode is constituted, greatly improving heat and humidity resistance and also enables the detection of electric signal with a high S/N ratio if the photo detection layer 16 is made about 10<9>-10<12>OMEGAcm. |
