| 摘要 |
PURPOSE:To form a tilt to a PSG film and etch the film, and to obtain excellent connection by using a liquid acquired by mixing 1-40 volume acetic acid to 1 volume fluoric acid when the PSG film on an aluminum conductor is photo- etched. CONSTITUTION:The PSG film 4 is shaped through a low-temperature growth CVD method as a passivation film of the aluminum conductor 3. A photo-resist pattern is formed, and the PSG film is etched selectively by the etching liquid, a mixing ratio thereof is 1-40 volume acetic acid to 1 volume fluoric acid. A resist is floated and the tilt is formed to the PSG film and the film is etched at that time. Accordingly, since the tilt 12 is shaped to the etching side surface of the PSG film, a thermal mechanical impact added by a bump or bonding is dispersed and added to the PSG film 4, and a crack is not formed in the PSG film. |
