发明名称 AMPHOROUS SEMICONDUCTORS
摘要 A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises depositing on a substrate a solid amorphous semiconductor film including at least one element, by glow discharge decomposition of a compound containing said at least one element and at least one alterant element in an atmosphere separately containing at least one different alterant element, wherein the plurality of different alterant elements comprise at least fluorine and are incorporated in said amorphous semiconductor film during the deposition thereof yielding an altered amorphous semiconductor material having reduced density of localized states in the energy gap thereof so that greatly increased diffusion lengths for solar cell application are obtained and modifiers or dopants can be effectively added to produce p-type or n-type amorphous semiconductor films so that the films function like similar crystalline semiconductors.
申请公布号 AU523424(B2) 申请公布日期 1982.07.29
申请号 AU19790044933 申请日期 1979.03.08
申请人 ENERGY CONVERSION DEVICES, INC. 发明人 STANFORD ROBERT OVSHINSKY;ARUN MADAN
分类号 C23C16/50;G03G5/082;H01L21/02;H01L21/205;H01L29/04;H01L29/26;H01L31/00;H01L31/20;H01L45/00;(IPC1-7):03G5/082;01L31/08;01L31/06;01L29/24;01L21/365;01L21/205;01L21/06;01L29/167;01L29/04;01L29/18 主分类号 C23C16/50
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