| 摘要 |
PURPOSE:To contrive the improvement of integration and to permit operation at a high voltage by connecting a bipolar transistor and an MOSFET for push pull operation. CONSTITUTION:Recessed grooves 12 are formed at an Si single crystal substrate 11. And a photo resist film is formed on the substrate 11 and etched. Next, a magnesia spinel single crystal layers 16 are formed on the substrate 11 and furthermore, low-resistant N<+> type Si single crystal layers 17 are formed. High- resistant N type Si single crystal layers 18 are formed by a thermal decomposition method. A source region 20 for MOSFET formation, drain region 21 and the base region 22 of an N-P-N transistor are formed in the insular single crystal layers 18 by using an SiO2 film 19 as a mask. Furthermore, each electrode 31, 32, 37 of the MOSFET and the electrodes 33, 34, 35 of the N-P-N transistor are formed. In this way, a semiconductor logical integrated circuit driven by a high voltage can easily be obtained without decreasing integration. |
