Method of operating non-volatile memory device

摘要

A method of operating a non-volatile memory device including first buffer memory cells and main memory cells, where the first buffer memory cells store first data, the main memory cells store second data, which is read from the first buffer memory cells, or recovered first data, which is recovered from the second data through a correction process, includes reading data, which is stored in sample buffer memory cells included in the first buffer memory cells, as sample data when an accumulated number of read commands, which are executed on the non-volatile memory device, reaches a reference value. The method includes counting the number of errors included in the sample data based an error correction code, and determining whether the main memory cells store the second data or the recovered first data based on the number of the errors relative to the first threshold value.

主权项

1. A method of operating a non-volatile memory device including first buffer memory cells and main memory cells, the first buffer memory cells storing a first data, the main memory cells storing a second data, which is read from the first buffer memory cells, or a recovered first data, which is recovered from the second data through a correction process, the method comprising:
reading data, which is stored in sample buffer memory cells included in the first buffer memory cells, as sample data when an accumulated number of read commands, which are executed on the non-volatile memory device, reaches a reference value; counting a number of errors included in the sample data based on an error correction code; and determining whether the main memory cells store the second data or the recovered first data based on the number of the errors relative to a first threshold value.