| 摘要 |
PURPOSE:To improve light emitting efficiency by arranging a high resistance layer on both sides of a stripe shaped active layer which is a light emitting layer and in the vicinity of said active layer, and effectively flowing a current supplied from a power source to the active layer. CONSTITUTION:In an N type InP substrate 101, a groove, wherein the width corresponding to a light emitting stripe width is 2-3mum and the depth is about 2.5mum is formed by supplying a desired photolithography technology and an etching technology. Then, an N type InGaAsP layer 102 and a N type InGaAsP active layer 103 are embedded so that the thickness of the layered body becomes 0.2mum in the groove by a liquid phase epitaxial technology. On the surface of substrate which surrounds the layers 102 and 103 so that the substrate is protruded, a layer 105 having the same composition as that of the layer 102 and the layer 106 having the same composition as that of the layer 103 are grown. Thereafter, a P type InGaAsP clad layer 107 and a P<+> InGaAsP layer 108 are grown on the entire surface so as to bury the groove. H<+> ions are implanted through said layered body, and an N type high resistance layer 104 of about 10<3>OMEGA.cm is formed at the surface layer part of the substrate 101 surrounding the active layer 103. |
