| 摘要 |
PURPOSE:To increase the sensitivity in a longer wavelength range, the aging stability, etc. by laminating an Se-Bi klayer having a crystalline structure as a charge generating layer and an Se layer having an amorphous structure as a charge transferring layer on an electrically conductive substrate. CONSTITUTION:On an electrically conductive support 11 made of Al, Cu or the like an Se-Bi layer contg. 2-4atom% Bi and having a crystalline structure is formed as a charge generating layer 13 by vacuum deposition or other method in about 1-5mum thickness. On the layer 13 a layer of Se having an amorphous structure or an Se aloy contg. >=90atom% Se and having an amorphous structure is formed as a charge transferring layer 15 by vacuum deposition or other method in about 40-70mum thickness to manufacture the desired electrophotographic receptor for light with longer wavelengths. The resulting receptor has sufficient photosensitivity in a longer wavelength range close to 800nm and is suitably used as a receptor for a semiconductor laser such as GaAs laser. |
