| 摘要 |
<p>PURPOSE:To obtain a GaAs FET having good conductivity and high reliability by a method wherein a gate electrode metal is connected to on a part of a gate bonding pad composed of an acid resistance metal. CONSTITUTION:An oxide film 21 is formed on the whole surface of a substrate consisting of a semi-insulating substrate 10, buffer layer 11, and operating layer 12 by a CVD method. Next, the patterning of a gate bonding pad is performed by photoresist to etch the oxide film 21 and the whole surfaces of a Ti layer 22 and at Pt layer 23 are evaporated and then the photoresist is removed. After that, the patterning of a gate electrode 14 is performed so that the gate electrode 14 may contact with a part of a bonding pad section, then, the whole surfaces of a Ti layer 24 and an Al layer 25 are evaporated to remove the photoresist and an evaporated metal is left at a desired part only. In this way, a gate metal is connected to on a part of the gate bonding pad. Therefore, good conductive connection becomes possible.</p> |
