| 摘要 |
PURPOSE:To cool integrated circuit elements and the like, by arranging P type and N type semiconductor layers which perform cooling function by Peltier effect on an insulating substrate so as to face to each other and providing a conducting layer which bridges those semiconductor layers. CONSTITUTION:Electrode layers 2 and 3 formed on the aluminum insulating substrate 1. The P type semiconductor layer 4 comprising solid solution of bismuth telluride and antimony telluride is formed on the electrode layer 2. The N type semiconductor layer 5 comprising solid solution of bismuth telluride and selenium telluride is formed on the electrode layer 3. An insulating layer 6 is formed between said semiconductor layers. The conducting layer 7 which bridges the semiconductor layers 4 and 5 is formed. In this constitution, the potential of the electrode layer 3 is made positive, and a current is flowed to the electrode layer 2. Then the heat is taken out of the conducting layer 7. |
