| 摘要 |
<p>PURPOSE:To reduce the defects of an array for a display device by forming a capacitor and switching transistor array in a semiconductor layer formed through an insulating film on an Si single crystal substrate and forming an array driving circuit section in the substrate. CONSTITUTION:An insulative film 32 made of a silicon nitride or the like is formed on an Si single crystal substrate 31, an array of switching transistors 34 using an amorphous silicon layer 33 and capacitor 35 to be controlled by the transistor is formed on the film, a circuit 37 for driving the array is formed in the substrate 31, and a picture element array and an array driving circuit are integrated. In this manner, an array for a display device having less defects such as defect of wire of integrated drive circuit can be obtained.</p> |
