| 摘要 |
PURPOSE:To improve the moisture resistance of a semiconductor integrated circuit device by eliminating a potential difference between leads by shortcircuiting all leads, thereby uniformly forming the thickness of an alumite layer, improving the quality of the layer and accordingly, effectively preventing the corrosion of an aluminum wiring layer. CONSTITUTION:In alumite treating, all leads are shortcircuited by a shortcircuit unit 29. A bonding pad 28 formed on a pellet 1 die bonded onto a tap lead 2 is connected to leads 4 via a bonding wire 9. All the leads 4 thus bonded are electrically shortcircuited by a shortcircuit unit 29. All the leads are thus shortcircuited, thereby preventing the local battery effect produced due to the potential difference between the leads in case of alumite treating and effectively forming an alumite layer of uniform thickness and high quality. |
