| 摘要 |
PURPOSE:To obtain the transistor in which breakdown voltage between an emitter and a base is not increased while a forward safety operation region is improved. CONSTITUTION:A P type base region 2 is formed to the collector region 1 of an N conduction type semiconductor substrate through a predetermined method, P conduction type base layers 3a, 3b having high concentration and an N type emitter region 4 are shaped into the base region 2, and metallic electrode layers 6, 7 are each coated onto the emitter region 4 and the base layer 3a having high concentration. |
