| 摘要 |
PURPOSE:To selectively form a microscopically formed region for the titled device by a method wherein an etching is performed on the insulator layer located on the part where a first photoresist film and a second photoresist film have been removed. CONSTITUTION:Silicon dioxide, as an insulator layer 2, is formed on the surface of a P type silicon wafer, a positive type photoresist 3 is applied on the above, and ultraviolet rays U are vertically irradiated through the mask 4 having a light-transmission part 5. When the above is developed, the positive photoresist 5' is dissolved, and the positive photoresist film remains on the non-irradiated part. Then, a negative type photoresist film 6 is formed by application on the positive type photoresist film 3, the size of the non-light transmission part 8 is formed at 4mum, for example, an arrangement is made with the remaining part of the positive type photoresist 3 so that a 2mum non-light transmission part will be existed there, and ultraviolet rays U' are vertically irradiated through a mask 7. When the above is developed, the negative type photoresist 6 remains on the irradiated part, the resist film can be removed from the non-irradiated part 8', and a silicon dioxide film of 2mum in width is exposed on a region 9. |
