发明名称 Method for producing a microelectronic device
摘要 A method for producing a microelectronic device including a substrate and a stack having at least one electrically conductive layer and at least one dielectric layer. The method includes formation, from one face of the substrate, of at least one pattern that is in depression with respect to a plane of the face of the substrate, the wall of the pattern having a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part having at least one inclined wall as far as the face of the substrate. With formation of the stack, the layers of the stack helping at least partially fill in the pattern. The stack is thinned of the stack at least as far as the plane of the face of the substrate so as to completely expose the edge of said at least one electrically conductive layer flush in one plane, and at least one electrical connection member is formed on the substrate in contact with the edge of the at least one electrically conductive layer.
申请公布号 US9521794(B2) 申请公布日期 2016.12.13
申请号 US201414193291 申请日期 2014.02.28
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 Sibuet Henri
分类号 H05K3/02;H05K3/10;H05K13/04;H01L49/02;H01L23/522;H01L27/02 主分类号 H05K3/02
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method for producing a microelectronic device comprising a substrate and a stack comprising at least one electrically conductive layer and at least one dielectric layer, the method comprising the following steps: forming, from one face of the substrate, at least one pattern in depression with respect to a plane of the face of the substrate, a wall of the pattern comprising a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part comprising at least one inclined wall as far as the face of the substrate, forming the stack, layers of the stack at least partially filling in the pattern, the forming of the stack being performed over the entire surface of the face of the substrate, thinning the stack at least as far as the plane of the face of the substrate so as to completely expose opposing edges of each of said at least one electrically conductive layer flush in one plane, after the thinning, forming at least one electrical connection member on the substrate in contact with one of the opposing edges of said at least one electrically conductive layer while completely leaving the one of the opposing edges of said at least one electrically conductive layer flush in said plane, wherein the step of forming an electrical connection member comprises: depositing an electrically insulating material on said one of the opposing edges of the electrically conductive layer of the stack, forming at least one opening in the electrically insulating material to provide an electrical contact point on said one of the opposing edges; and depositing an electrically conductive material to form the electrical connection member, said deposition being configured so as to pass through the at least one opening.
地址 Paris FR