| 摘要 |
PURPOSE:To form an uneven pattern in uniform depth, and to obtain multilayer wiring structure having high density by etching one of laminated insulating films. CONSTITUTION:The SiO2 film 321 and the polyimide resin film 322 are shaped onto an Si substrate 31. The film 322 is selectively etched, and a concave section is formed. Difference at a stage of the concave section can be made constant because the speed of etching of the film 322 is larger than that of the film 321 at that time. An Al-Si film is coated through a sputtering method, and stage breaking is generated, thus forming wiring layers 331-332. A resist pattern 34 is shaped, and the unnecessary sections of the wiring layers 331-332 are removed. |
