REVERSE CONDUCTION INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MANUFACTURING METHOD

摘要

A reverse conducting insulated gate bipolar transistor (IGBT) manufacturing method, comprising the following steps: providing a substrate having an IGBT structure formed on the front surface thereof; implanting P+ ions onto the back surface of the substrate; forming a channel on the back surface of the substrate through photolithography and etching processes; planarizing the back surface of the substrate through a laser scanning process to form P-type and N-type interval structures; and forming a back surface collector by conducting a back metalizing process on the back surface of the substrate. Laser scanning process can process only the back surface structure requiring annealing, thus solve the problem of the front surface structure of the reverse conducting IGBT restricting back surface annealing to a low temperature, improving the P-type and N-type impurity activation efficiency in the back surface structure of the reverse conducting IGBT, and enhancing the performance of the reverse conducting IGBT.

主权项

1. A method of manufacturing a reverse conducting insulated gate bipolar transistor, comprising the following steps:
providing a substrate having an IGBT structure formed on a front side thereof; implanting P+ ions to a back side of the substrate; forming a trench on the back side of the substrate using photolithography, etching process; planarizing the back side of the substrate using laser scanning technology to form a P-type and N-type interval structure; and performing a back side metallization process at the back side of the substrate, and forming a back side collector.