| 发明名称 | Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions | ||
| 摘要 | A method of an aspect includes forming a first thicker layer of a first material over a first region having a first surface material by separately forming each of a first plurality of thinner layers by selective chemical reaction. The method also includes limiting encroachment of each of the first plurality of thinner layers over a second region that is adjacent to the first region. A second thicker layer of a second material is formed over the second region having a second surface material that is different than the first surface material. | ||
| 申请公布号 | US9530733(B2) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201314909736 | 申请日期 | 2013.09.27 |
| 申请人 | Intel Corporation | 发明人 | Bristol Robert L.;Blackwell James M.;Clendenning Scott B.;Gstrein Florian;Han Eungnak;Kloster Grant M.;Roberts Jeanette M.;Romero Patricio E.;Hourani Rami |
| 分类号 | H01L23/58;H01L23/528;H01L21/32;H01L21/768;H01L21/3105;H01L21/311;H01L21/3205;H01L23/522;H01L23/532;H01L21/321 | 主分类号 | H01L23/58 |
| 代理机构 | Blakely, Sokoloff, Taylor & Zafman LLP | 代理人 | Blakely, Sokoloff, Taylor & Zafman LLP |
| 主权项 | 1. A manufacturing method comprising: forming a first thicker layer of a first material over a first region having a first surface material by separately forming each of a first plurality of thinner layers by selective chemical reaction; limiting encroachment of each of the first plurality of thinner layers over a second region that is adjacent to the first region; and forming a second thicker layer of a second material over the second region having a second surface material that is different than the first surface material. | ||
| 地址 | Santa Clara CA US | ||