发明名称 | Passivation structure of fin field effect transistor | ||
摘要 | A FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower fin portion comprising a first semiconductor material having a first lattice constant; an upper fin portion comprising a second semiconductor material having a second lattice constant greater than the first lattice constant; a middle fin portion comprising a third semiconductor material having a third lattice constant between the first lattice constant and the second lattice constant; and a passivation structure surrounding the fin structure comprising a lower passivation portion surrounding the lower fin portion comprising a first oxynitride of the first semiconductor material; an upper passivation portion surrounding the upper fin portion comprising a second oxynitride of the second semiconductor material; and a middle passivation portion surrounding the middle fin portion comprising a third oxynitride of the third semiconductor material. | ||
申请公布号 | US9530710(B2) | 申请公布日期 | 2016.12.27 |
申请号 | US201514815027 | 申请日期 | 2015.07.31 |
申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chen Yen-Yu;Shih Chi-Yuan;Yeh Ling-Yen;Wann Clement Hsingjen |
分类号 | H01L21/02;H01L23/31;H01L29/78;H01L29/66;H01L29/165;H01L23/29 | 主分类号 | H01L21/02 |
代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
主权项 | 1. A method of fabricating a fin field effect transistor, the method comprising: forming a first fin on a semiconductor substrate, the first fin comprising a first semiconductor material, a second semiconductor material over the first semiconductor material, and a third semiconductor material over the second semiconductor material, the first semiconductor material having a first lattice constant, the second semiconductor material having a second lattice constant, the third semiconductor material having a third lattice constant, the first lattice constant being different than the second lattice constant, the second lattice constant being different than the third lattice constant; performing an oxidation process along sidewalls of the first fin; and performing a nitridation process along sidewalls of the first fin, the nitridation process forming a nitride layer along sidewalls of the first fin, the nitride layer having a first portion comprising elements of the first semiconductor material, a second portion comprising elements of the second semiconductor material, and a third portion comprising elements of the third semiconductor material. | ||
地址 | Hsin-Chu TW |