| 发明名称 | Structure for preventing buried oxide gouging during planar and FinFET Processing on SOI | ||
| 摘要 | A structure for manufacturing a semiconductor device without damaging the insulator layer during creation of fin field effect transistor (FinFET) devices includes an insulator layer; an active semiconductor layer; and an etch stop layer including material resistant to those processes the etch stop layer is exposed to during creation of a FinFET having fins formed from the active semiconductor layer, such that the etch stop layer and the insulator layer are not damaged during creation of the FinFET; wherein, the etch stop layer is between the insulator layer and the active semiconductor layer. | ||
| 申请公布号 | US9530659(B2) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201514603624 | 申请日期 | 2015.01.23 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Rim Kern;Wang Junli |
| 分类号 | H01L21/308;H01L23/29;H01L21/84;H01L29/66;H01L29/78;H01L27/12 | 主分类号 | H01L21/308 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A structure for manufacturing a semiconductor device without damaging the insulator layer during creation of fin field effect transistor (FinFET) devices, comprising: an insulator layer; an active semiconductor layer; and an etch stop layer comprising material resistant to those processes the etch stop layer is exposed to during creation of a FinFET having fins formed from the active semiconductor layer, such that the etch stop layer and the insulator layer are not damaged during creation of the FinFET; wherein, the etch stop layer is between the insulator layer and the active semiconductor layer. | ||
| 地址 | Armonk NY US | ||