| 摘要 |
PURPOSE:To prepare a high-quality single crystal free from inclusion, in high efficiency, in the titled synthesis using a molten salt, by purifying the flux and/ or the raw materials with heat-treatment. CONSTITUTION:Flux of flux and a raw material of beryl are heated at about 1,000-1,400 deg.C for about 15hr, and quenched to about 500-650 deg.C. The impurity which is a main cause of inclusion can be removed by this treatment. The molten salt (flux) quenched to the specified temperature is transferred to another crucible containing the raw material of beryl, heated at a specific temperature, and charged with a seed crystal to effect the growth of beryl. A high-quality beryl single crystal can be prepared by this process. |
