| 摘要 |
PURPOSE:To increase an output power to a load and to decrease the distortion factor, by using a gate voltage of an MOSFET group at its drain voltage or over. CONSTITUTION:Q1-Q8 are E-IGFETs. A drain output of the MOSFET group 1 comprising the Q1-Q4 is connected to the input of NOR gates 2, 3 a sign input S determining the polarity of current is connected to a gate electrode of the Q8 and the inputs of an inverter 4 and the gate 3, and an output of the gate 2 is connected to the gate of the Q5, an output of the gate 3 to the gate of the Q6 and an output of the inverter 4 to the gate of the Q7. The source of the Q5 is connected to a terminal 9 and the drain is connected to a terminal 8. The source of the Q6 is connected to the terminal 9 and the drain is connected to a terminal 7. The drain of the Q7 is connected to the other end 6 of the power supply and the source is connected to the terminal 8. The drain of the Q8 is connected to the other end 6 of the power supply and the source is connected to the terminal 7. Thus, a large output is obtained with a small distortion factor. |
