| 摘要 |
PURPOSE:To grow easily a silicon single crystal film having large grain sizes, by diffusing ions acting as nuclei for single crystallization at the grain boundary of a non-single crystal silicon film deposited via an insulation film on a substrate and applying a zone melting treatment to said film. CONSTITUTION:An oxide film 2 of SiO2 or the like and an insulation film consisting of a nitride film 3 having the heat resistance higher than the heat resistance of said film are deposited on a glass substrate 1, and in succession, periodic grooves are formed on the film 3. A non-single crystal silicon film 4 of polysilicon or amorphous silicon is deposited thereon. Ions 5 of ion radii differing from Si, such as P, As or the like are implanted and diffused by ion implantation or the like at the grain boundary of the film 4. When the same is heated to melt in a high frequency heating furnace, the film 4 is annealed with a laser beam 6 and the homogeneous silicon single crystal film of large grain sizes is grown and formed easily in a good yield. |
