| 摘要 |
PURPOSE:To improve integration density of IC element and realize high speed operation thereof by providing the structure that one electrode window is formed for a plurality of wiring layers and the wiring layers are connected in parallel within the electrode window. CONSTITUTION:A large electrode window 10 is provided for a collector region 7. A wiring material, for example, aluminium is coated to the entire part of this electrode window 10 and then it is simultaneously patterned by the photo process in view of forming wiring layers. Thereby, if the wiring layers 11, 12 are displaced, the wiring layer does not go out of electrode window 10 and the connecting areas of respective wiring layers and electrode window is not reduced. Therefore, it is enough that the width of wiring layers 11, 12 and the interval between the wirings are provided to one wiring layer and there is not need of providing a margin width for wiring. |
