| 摘要 |
PURPOSE:To easily form ohmic connection between regions having different conductivity types on the occasion of forming a semiconductor device with the SOI (Silicon on Insulator) technique by selectively converting the insulating film existing on the high concentration region in the substrate into a conductive body. CONSTITUTION:A silicon nitride film is deposited and heated on the area where an aperture 53 and N<+> type region 55 are formed, a thermal oxide film 52 is formed at the surface of P type silicon substrate 51, then arsenic or phosphorus is implanted and thereby the N<+> type region 55 is formed. After depositing the non-doped or N type polycrystalline or amorphous silicon leaving the silicon nitride film 54 on the N<+> type region, a single crystal silicon film 56 is formed by irradiating the laser beam or electron beam. Moreover, the P<+> type region 57 is formed by selectively implanting the boron. The desired part of silicon nitride film 54 is destroyed by irradiating the ion beam 64 and the destroyed area 63 is converted to a conductive area and thereby the P<+> type region 57 of the single crystal silicon film 56 and the N<+> type region 55 of the silicon substrate 51 are electrically connected. |
