| 摘要 |
<p>An MOS transistor of second conductivity type is provided which is formed in a semiconductor substrate (101) of first conductivity type and includes a first source region (105) of second conductivity type, a first drain region (106) of second conductivity type, and a gate electrode (104) provided on a gate insulation layer (107). Further, an MOS transistor of first conductivity type is provided which is stacked on the MOS transistor of second conductivity type and includes a second source region (114), a second drain region (115) and the gate electrode (104). The first and second source regions are connected to each other through a conductive layer (1091) which is selected from a given metal layer and a given metal silicide layer.</p> |
