| 摘要 |
A process for producing a glass passivated semiconductor device, such as a thyristor, comprises forming a first groove 56 in a large area body of semiconductor material, forming regions 62,64,66, of alternating type conductivity within the area enclosed by the groove and then forming a second shallower groove within the area enclosed by the first groove, the second groove then being coated with glass 84 to passivate the surfaces exposed by the second groove. Electrodes 90,96 are then affixed to preselected regions to form a semiconductor device. A plurality of such devices may be made in a single semiconductor body and separated by cutting through the body outside the first groove. <IMAGE> |
