| 摘要 |
PURPOSE:To prevent two electrode layers pinching a photo semiconductor layer from short-circuit trouble by a method wherein a pinhole is dug coaxially with the pinhole of the photo semiconductor layer to the electrode layer to be adhered after formation of the semiconductor layer. CONSTITUTION:The thin film type photo semiconductor layer 3 is adhered on the transparent electrode layer 2 arranged on one main surface of a transparent substrate 1, and the back electrode 4 is laminated thereon. At the point in time thereof, when the pinhole 5 is fomred in the layer 3, the back electrode material penetrates the pinhole 5, and the layer 4 and the layer 2 are made in the electrically short-circuited condition. Accordingly, inferior goods according to short- circuit like this are selected, and the place of the pinhole 5 is examined according to a beam of light 7. Then the output beam of pulse laser is irradiated to the place of the pinhole 5 thereof from the electrode 4 side as shown with an arrow mark 8 to dig the pinhole 6 coaxially with the pinhole 5 in the layer 4, both the pinholes 5, 6 are communicated, and the insides of the pinholes 5, 6 are made in the electrically insulated condition. Accordingly, the layer 2 and the layer 6 can be prevented from generating short-circuit. |
