METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PHN. 9738 -15- A method of manufacturing a semiconductor device having two juxtaposed regions of opposite conductivity types which adjoin a surface and which together constitute a p-n junction which is preferably perpendicular to the surface and the doping concentration of which decreases towards the surface. According to the invention n-type and p-type buried layers are provided beside each other on a semiconductor substrate and on said layers a high-ohmic epitaxial layer is grown. By heating, the dopants diffuse from the buried layers through the whole thickness of the epitaxial layer and into the substrate. With suitably chosen donor and acceptor atoms (for example boron and phosphorous in silicon) n and p-type regions are formed in the epitaxial layer and form a p-n junction perpendicular to the surface by compensation of lateral diffusions from the buried layers.