| 摘要 |
PURPOSE:To form a dual diode in a small type, and to contrive to reduce cost of production by a method wherein the dual diode is constructed in one chip. CONSTITUTION:An N-type epitaxial layer 2 is formed on a substrate 1 consisting of P<+> type conductive silicon, and the N-type epitaxial layer 2 is isolated into the first region 4 and the second region 5 by P<+> type diffusion isolation layers 3. A P<+> type diffusion layer 6 is formed at the center of the surface layer part of the first region 4 to form the P<+>-N diode, an N<+> type diffusion layer 7 is formed in the surface layer part of the second region 5 to effect ohmic contact, and the N<+>-N-P<+> diode is formed between the P<+> type diffusion isolation layer 3. Then, an N<+> type diffusion connection layer 8 is formed, the P<+> type diffusion isolation layer 3 is short-circuited by an electrode 9, and is conducted electrically to an electrode 10 on the under surface of the substrate 1. Moreover, electrodes 11, 12 are provided respectively on the P<+> type diffusion layer 6 of the first regin 4 and on the N<+> type diffusion layer 7 of the second region 5. Accordingly, the diodes integrated in one chip and to operate at a high speed or an IC of diode matrix, etc., according to organic connection is obtained at a low cost. |
