| 摘要 |
PURPOSE:To reduce capacity between the base and the collector, and to improve power gain efficiency of a semiconductor device by a method wherein the shield layer of a conductive layer to be connected to an emitter electrode is provided in an insulating film at the lower part of a base bonding pad. CONSTITUTION:Boron is diffused to a part of the surface layer part of the epitaxial layer 2 of a semiconductor substrate 1 having an N type conductively epitaxial layer 2 on the main surface and consisting of N<+> type conductive silicon to form a P type conductive base region 3. Then, after a poly-silicon film 15 is formed on an interlayer insulating film 5, the poly-silicon film 15 is left extending over a base bonding pad forming region to form the sheild layer 12. Then, the whole region of the main surface of the semiconductor substrate 1 is covered with the first passivation film 6 consisting of a PSG film, an emitter contact hole 16 is provided, and phosphorus is diffused to form an emitter region 4. Moreover, after a base contact hole 17 and a connecting part contact hole are provided, a base lead out electrode 8, an emitter bonding pad 9 and an emitter lead out electrode 7 having a conductive part 14 at a connecting part 13 through the connecting part contact hole are formed. |
