| 摘要 |
<p>PURPOSE:To enable a high performance thermo-electric generating element to be constructed by a method wherein heat-pipe or the like is employed to cool the lower-temperature end of the main body of the titled element. CONSTITUTION:A P type semiconductor 10A and N type semiconductor 10B are combined constructing the main body of a thermo-electric generating element 10 with a P- N junction 10C located at the higher temperature junction side. A multiplicity of the main bodies 10 are electrically, serially combined. The end of a lower temperature side is thermally connected to a heat-pipe 20 with the intermediary of a layer of heat-resisting, insulating, adhesive agent. Enclosed in the heat-pipe 20 made of metal is a liquid to vaporize at a certain temperature. Thermal radiation is effected due to heat of evaporation. When heat is applied to the PN junction 10C on the higher temperature junction side, due to the difference in temperatures between the higher temperature junction and lower temperature junction, electricity is thermally generated in the multiplicity of main bodies 10, and the total power is lead out. The heat-pipe 20 is capable of keeping the temperature drop to virtual zero when transporting heat in the vicinity of 50W. This means that it is possible to lower the temperature at the lower-temperature side of the main body 10 as low as the temperature of the cooling side, provided with a radiating fin 21 of the heat-pipe 20, thereby thermally generating an adequate quantity of electric power.</p> |
