| 摘要 |
PURPOSE:To obtain the wafer of high purity and high quality by diffusing P during the manufacturing process of the Si single crystalline wafer and gettering an internal impurity into a P diffusing layer. CONSTITUTION:A wafer piece cut out of ingot is lapped, and the P diffusing layers 11 in approximately 20mum depth are formed on both surfaces through treatment for 0.2-5hr at 1,100 deg.C by using POCl3. The layers 11 are removed through etching, and a main surface is mirror-ground, washed and packed. According to the constitution, the wafer of high purity and high quality is obtained. |
