| 摘要 |
PURPOSE:To allow this circuit to perform high speed action by a simple construction by a method wherein an FET used as a driver is made a normally ON- type, and a load FET a normally ON-type whose gate and source are connected at the same potential. CONSTITUTION:The FET T1 used as the driver is made a normally on-type, and the FET T2 used as the load a normally on-type whose gate and source are so connected as to be at the same potential. Then, the shape, size, and impurity concentration of each FET are so set that a drain saturated current value in the operated state of the load FET T2 becomes larger than the drain saturated current value of the driver FET T1 when the gate input voltage of the driver FET T1 is zero volt. |
