| 摘要 |
PURPOSE:To avoid the short circuit caused by silicide connection by forming a non reactive film such as an Si nitride film on the side surface of a gate polycrystalline Si and making it to remain, resulting in silicification. CONSTITUTION:A field oxide film 22 and an oxide film 23 serving as a gate insulation film are formed on a P type Si substrate 21. Next, the polycrystalline Si 24 serving as the gate electrode is made to remain, and the non reactive film 25 such as the Si nitride film left over the entire surface only on the side surface of the polycrystalline Si 24. Then, the oxide films on the source and drain are removed, and an N type impurity is implanted and implanted also into the Si 24, thus changing it to an N type. Thereafter, a source and a drain 26 and 27 are formed by heat treatment. A high melting point metallic film 28 is vapor deposited over the entire surface. The metal and the Si are mixed each other by implanting ions of a high mass. The silicide is formed thereby. |
