发明名称 |
FORMATION OF MAGNETIC LAYER |
摘要 |
PURPOSE:To form an iron oxide group magnetic layer for vertical magnetization with a high speed and excellent reproducibility by a method wherein the temperature of a substrate is kept lower than 500 deg.C while the iron oxide system magnetic layer suitable for vertical magnetization is formed by sputtering and deposition of a magnetic layer composing material. CONSTITUTION:A substrate 6, on which a magnetic thin film is formed, is held vertically to the side between facing targets by a substrate holder 5. The substrate 6 is heated by a heater 11 to be kept at the temperature lower than 500 deg.C. A magnetic field is formed to the direction perpendicular to each surface of a pair of targets T1, T2, facing each other in parallel and sputtered gas ions are accelerated by this magnetic field in an electric field of a cathode-drop portion and give impact against the surface of the target to emit gamma-electrons so that a high density plasma is sputtered sufficiently in the space between the targets T1-T2 and accumulated on the base 6 at the side as a magnetic material. |
申请公布号 |
JPS59148316(A) |
申请公布日期 |
1984.08.25 |
申请号 |
JP19830023047 |
申请日期 |
1983.02.15 |
申请人 |
KONISHIROKU SHASHIN KOGYO KK |
发明人 |
NAOE MASAHIKO;ISHIBASHI SHIYOUZOU |
分类号 |
G11B5/66;G11B5/64;G11B5/85;G11B5/851;H01F41/14;H01F41/18 |
主分类号 |
G11B5/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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