| 摘要 |
PURPOSE:To reduce the superposition of a gate electrode on a source and a drain region by forming a recess in the surface of the substrate between the gate electrode and a field oxide film, and then providing polycrystalline semiconductor layers of different conductivity types in this recess and on said film. CONSTITUTION:A gate oxide film 2, a gate electrode 3, and the field oxide film 4 are formed on the surface of the P type Si substrate 1, and holes 11 and 12 of approx. 5,000Angstrom are formed with a resist film 7 used at this time as a mask. After removing the resist film 7 only at the part provided with the wiring on the field oxide film 4, a phosphorus doped polycrystalline Si layer 8 is deposited with a thickness of approx. 5,000Angstrom . By removing the resist layer 7, polycrystalline Si remains only at the source and drain regions 81 and 82 and the wiring parts 83 and 84, resulting in the formation of an MOSFET. |
