| 摘要 |
PURPOSE:To form an iron oxide group magnetic layer for vertical magnetization with a high speed and excellent reproducibility by a method wherein the iron oxide system magnetic layer suitable for vertical magnetization is formed by sputtering and deposition of a magnetic layer composing material, and at the same time a gas pressure is kept at 10<-4>-10<-1> Torr. CONSTITUTION:A substrate 6, on which a magnetic thin film is formed, is held vertically to the side between facing targets by a substrate holder 5. A prescribed gas (especially Ar+O2) to be used for formation of the magnetic layer is supplied to keep the gas pressure at 1X10<-4>-10<-1> Torr and under this condition a magnetic field is formed to the direction prependicular to each surface of a pair of targets T1, T2, facing each other in parallel and sputter gas ions are accelerated by this magnetic field in an electric field of a cathode-drop portion and give impact against the surface of the target to emit gamma-electrons so that a high density plasma is formed in a space between the targets T1-T2. As a result, target substance is sufficiently sputtered and accumulated on the substrate 6 at the side as a magnetic material. |
