| 摘要 |
PURPOSE:To make taper structure, etc. for removal of disconnection according to the level difference of a wiring, and leakage at an insulating layer unnecessarily, and moreover to enable to manufacture a semiconductor device by a simple process by a method wherein the respective edge parts of the source and drain regions of a thin film transistor are formed inside from a semiconductor layer constructing the thin film transistor. CONSTITUTION:A polycrystalline silicon semiconductor layer 101 is deposited at about 2,500Angstrom thickness using the glow discharge method on an insulating substrate 100 of glass, quartz, etc., and then an N<+> type layer 102 of 0.1OMEGA.cm of bulk resistance is deposited at about 800Angstrom thickness using the glow discharge method. Moreover, Al, Mo, Cr, etc. is evaporated as a metal contact layer. Then, the source region and the drain region of a TFT are formed, and at the same time, isolation between the other parts is performed. Then, after an insulating layer 104 is deposited at about 3,000Angstrom thickness, contact holes 105 are opened, and moreover a metal such as Al, Cr, etc. for wirings 106 for a source and a drain and for a top gate electrode 107 is evaporated, and the electrode is formed according to the photoetching method. |
