| 摘要 |
PURPOSE:To obtain an integrated circuit containing a P-N-P type power transistor having a favorable electric characteristic by a method wherein the main part of an active region is formed in an internal region having scanty crystal defects, and impurity concentration of a base region is made as to have a peak at the part separated a little from an emitter region. CONSTITUTION:A P<-> type silicon region 12 is formed according to epitaxial growth on a P<+> type silicon region 11, and then N type diffusion regions 13a, 13b separated from each other are formed at the same time in the region 12. Then a P type diffusion region 15a to surround the region 13b in a ring type is formed in the region 12, a P type diffusion region 15b is formed at the same time in the region 13b, and then N<+> type diffusion regions 16a, 16b separated from each other are formed at the same time in the region 15b. Then an N<-> type silicon region 17 is formed on the region 12 according to epitaxial growth, and then P<+> type diffusion regions 18a, 18b, 18c are formed at the same time in the region 17. Then N<+> type diffusion regions 19a, 19b are formed at the same time in the region 17. Then P type diffusion regions 20a, 20b are formed in the region 17 of the top parts of the regions 16a, 16b at first, an N<+> type diffusion region 21 is formed in the region 20a in succession, and electrodes 22a-22i are formed finally. |
