| 摘要 |
PURPOSE:To inhibit the generation of metallic scraps, and to improve yield by forming a coating region of a second metallic film in a forming region of a first metallic film when a substrate containing the first metallic film shaped through selective etching and a photo-resist pattern with the second metallic film and the second metallic film is left selectively through a lift-off method. CONSTITUTION:A semiconductor substrate 201 is coated with an aluminum thin- film 202 through an evaporation method. Photo-resist patterns 204 are formed, and the aluminum film 202 is removed selectively through etching, and can be utilized as a spacer film on a lift-off. The substrate is coated with titanium- platinum thin-films 205, 205' through sputtering. The photo-resists 204 are dissolved and removed, and the unnecessary titanium-platinum thin-films 205 of the upper section and side surface of the photo-resists are taken away. A ''TR tape'' is pasted on the substrate, residual minute metallic pieces are attached and removed, and the aluminum film 202 used as the spacer film is peeled off, thus completing the formation of a wiring. |
