发明名称 EVALUATING METHOD OF AMORPHOUS SILICON PHOTOVOLTAGE DEVICE
摘要 PURPOSE:To obtain an effective and simple method which can decide whether a doping is performed in proper quantity or more of boron into an I layer by projecting white bias beams, measuring a collection efficiency spectrum and comparing said spectrum with a collection effeciency spectrum when white bias beams are not projected. CONSTITUTION:A lamp 11 for a spectroscope light source is projected to a spectroscope 12, the light-projecting side or light-emitting side of the spectroscope is chopped by a chopper 13 having not less than several Hz frequency, a sample 14 in an amorphous silicon photovoltage device is irradiated with monochromatic light of 10<13>-10<15>photon/ cm<2>.sec, an outputted AC current component is DC-amplified by a lock-in amplifier 15 and recorded to a recorder 16, and collection efficiency spectra are measured. A white bias light source 17, which does not pass through the chopper 13 and is projected directly to the sample 14, and a DC bias power supply 18 applied to the sample 14 are provided. Collection efficiency spectra when white bias beams are projected and when they are not projected are measured by using such a measuring system, and the forms of both spectra are compared, thus deciding a doping in proper quantity or more of boron into an I layer in the amorphous silicon photovoltage device.
申请公布号 JPS59177973(A) 申请公布日期 1984.10.08
申请号 JP19830051443 申请日期 1983.03.29
申请人 TOSHIBA KK 发明人 NOZAKI HIDETOSHI;HATAYAMA TAMOTSU;KAMIMURA TAKAAKI;UTAGAWA TADASHI
分类号 H01L31/04;H01L31/0376 主分类号 H01L31/04
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