| 摘要 |
PURPOSE:To reduce the amplitude of the pulse voltage which is needed for bit cycle transfer of a pair of vertical Bloch lines, by setting the gyro-constant of a ferromagnetic film used to a magnetic bubble memory element at a level larger than the prescribed value. CONSTITUTION:The gyro-constant gamma of a ferromagnetic film which is used to a magnetic bubble memory element and defines the direction vertical to the film surface as a magnetization facilitating direction is set at a level larger than 1.8X10<7>rad/sec.Oe. Therefore the amplitude H is reduced for a bias pulse magnetic field needed to give transfer to a pair of vertical Bloch lines by a bit cycle 2l based on the equation I . As a result, the constitution can be simplified for a voltage pulse generating part together with reduction of the power consumption. In the equation, T means the pulse width of voltage pulse and DELTA means the magnetic wall parameter respectively. |
