| 摘要 |
PURPOSE:To obtain high integration possibility by enabling to write with preferable memory retentivity at a low voltage by using an oxidized film formed by thermally oxidizing a silicon being single crystal or near a single crystal on an insulator layer on a floating gate electrode. CONSTITUTION:This memory has a semiconductor substrate 11, a thin insulating film 12 of oxide or nitride, a floating gate electrode 13 formed of silicon being a single crystal or near the single crystal, an insulating film 14 formed by thermally oxidizing from the silicon being single crystal or near the single crystal, and a control gate electrode. In this structure, when a voltage is applied so that the control gate electrode 15 becomes positive to the substrate 11, electrons are passed through the film 12, if the voltage is sufficiently high, and stored in the electrode 12. In other words, information is stored. At this time the film 14 is formed of an oxide formed by thermally oxidizing the silicon being single crystal or near the single crystal, an insulating film 14 formed by thermally oxidizing from the silicon being single crystal or near the single crystal, and a control gate electrode. In this structure, when a voltage is applied so that the control gate electrode 15 becomes positive to the substrate 11, electrons are passed through the film 12, if the voltage is sufficiently high, and stored in the electrode 12. In other words, information is stored. At this time the film 14 is formed of an oxide formed by thermally oxidizing the silicon being single crystal or near the single crystal. Accordingly, its insulation is very excellent, and the nonvolatile semiconductor memory having good memory retentivity can be provided. |
