发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CIRCUIT INCLUDING THE DEVICE |
摘要 |
A semiconductor device is disclosed. The semiconductor device includes a second conductive type substrate including a first first-conductive-type doping layer and a plurality of devices on the second conductive type substrate, wherein a first device of the devices includes a first nitride semiconductor layer on the first first-conductive-type doping layer, a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the first first-conductive-type doping layer and the first nitride semiconductor layer, a first contact electrically connected to the first heterojunction interface, and a contact connector electrically connecting the first contact to the first first-conductive-type doping layer. |
申请公布号 |
US2016372555(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
US201415101197 |
申请日期 |
2014.01.17 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
TWYNAM John |
分类号 |
H01L29/205;H01L29/872;H01L29/778;H01L27/06;H01L27/095;H01L29/36;H01L49/02;H01L29/20;H01L27/08 |
主分类号 |
H01L29/205 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device, comprising:
a second conductive type substrate comprising a first first-conductive-type doping layer; and a plurality of devices on the second conductive type substrate, wherein a first device of the devices comprises: a first nitride semiconductor layer on the first first-conductive-type doping layer; a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the first first-conductive-type doping layer and the first nitride semiconductor layer; a first contact configured to be electrically connected to the first heterojunction interface; and a contact connector configured to electrically connect the first contact to the first first-conductive-type doping layer. |
地址 |
Jung-gu, Seoul KR |