PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

Disclosed is a plasma processing apparatus including a processing container, an ion trapping member partitioning the inside of the processing container into a processing space and a non-processing space and transmitting radicals and trap ions, a placing table, a first gas supply unit supplying a first processing gas into the non-processing space, a second gas supply unit supplying a second processing gas into the processing space, a first high frequency power supply supplying a high frequency power to generate radicals and ions in the non-processing space, a second high frequency power supply supplying a high frequency power to generate radicals and ions in the processing space, and a third high frequency power supply supplying a high frequency power of a lower frequency than that of the high frequency power supplied from the second high frequency power supply to draw the ions generated in the processing space into the workpiece.

主权项

1. A plasma processing apparatus, comprising:
a processing container; an ion trapping member serving as a member partitioning the inside of the processing container into a processing space for processing a workpiece with plasma and a non-processing space and configured to transmit radicals and trap ions; a placing table disposed in the processing space and configured to place the workpiece thereon; a first gas supply unit configured to supply a first processing gas into the non-processing space; a second gas supply unit configured to supply a second processing gas into the processing space; a first high frequency power supply configured to supply a high frequency power for changing the first processing gas into plasma so as to generate radicals and ions in the non-processing space; a second high frequency power supply configured to supply a high frequency power for changing the second processing gas into plasma to the placing table so as to generate radicals and ions in the processing space, separately from the radicals transmitted into the processing space by the ion trapping member; and a third high frequency power supply configured to supply, to the placing table, a high frequency power of a lower frequency than that of the high frequency power supplied from the second high frequency power supply so as to draw the ions generated in the processing space into the workpiece.