发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable the electrical connection of a back surface of the element with a metallic conductor layer by a method wherein after the metallic conductor layer on a surface of an organic insulating film substrate in an element mounting region is removed, said organic insulating film of substrate in this region is removed to the metallic conductor on the back surface so as to form a recess and the element is mounted in this recess. CONSTITUTION:A glass epoxy substrate whose both surfaces are covered with Cu is prepared and a through hole 13 is opened on the desired position of said substrate. After that, the overall plating is performed by electroless plating thereby coating the inner wall of the through hole 13 with a Cu layer 12. Next, the desired Cu pattern 12'' is formed by photolithography and etching techniques on the both surfaces of the glass epoxy substrate. The Cu layer on a front surface is removed whereas the Cu layer on a back surface is left. Next, the glass epoxy of substrate in a dice mounting region is removed to the thin Cu layer on the back surface so as to form a recess 14. Next, the surface of the Cu pattern 12'' is coated with an Ni-Au plating layer to form a conductor pattern 15, after which a dice 16 is mounted in the recess 14 and electrodes are connected to the conductor pattern 15 by a wire 17.
申请公布号 JPS6035543(A) 申请公布日期 1985.02.23
申请号 JP19830143693 申请日期 1983.08.08
申请人 OKI DENKI KOGYO KK 发明人 OOTA YUTAKA;KOBAYASHI HARUFUMI
分类号 H01L21/52;H01L21/58;H01L23/14;H01L23/538 主分类号 H01L21/52
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