| 摘要 |
PURPOSE:To prevent the damage of a junction boundary of a Schottky barrier by forming a buffer electrode on a contacting electrode of the Schottky junction, and bonding lead wirings through the buffer electrode. CONSTITUTION:The same conductor epitaxial layer 12 as a substrate is grown on a silicon substrate 11, an SiO2 is covered on the layer 12 to form an insulating layer 13. A window of the Schottky junction is opened by a photoetching method at the layer 13. After a barrier metal 14 is formed by a vacuum evaporation method, it is heat treated to form a Schottky portion 15. A thin gold metal is deposited or sputter grown on the layer 14 to form 2-layer film as a contacting electrode metal layer 16. Then, the electrodes are formed. A thick gold film is selectively formed on the electrode as a buffer electrode 20. Lead wirings 17 are bonded to the electrode 20. |
