发明名称 TREATING SEMI-CONDUCTOR WAFER IN VACUUM ENVIRONMENT
摘要 The wafer chuck disclosed herein is adapted to hold a semiconductor wafer during high energy treatment in a vacuum environment. The wafer is clamped by its rim to a circular domed plate so as to distort the wafer into close proximity with the domed face of the plate. Ports are provided in the face of the plate for introducing a mobile gas under controlled pressure to the interstitial space between the wafer and the domed face of the plate. An annular groove is provided around the periphery of the domed face and this groove is connected to a vacuum pumping means thereby to minimize leakage of the mobile gas into the vacuum environment.
申请公布号 GB8503509(D0) 申请公布日期 1985.03.13
申请号 GB19850003509 申请日期 1985.02.12
申请人 GCA CORPORATION 发明人
分类号 B23Q3/08;H01L21/67;H01L21/683;H01L21/687 主分类号 B23Q3/08
代理机构 代理人
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