| 摘要 |
PURPOSE:To prevent a crack in interlayer insulating film from happening by a method wherein, in the duplicated part of lower and upper layer wirings laminated through the intermediary of an interlayer insulating film, the lower wiring is provided with at least one slit. CONSTITUTION:A silicon-like semiconductor substrate 1 is coated with an insulating film 2 like a silicon dioxide film. Then a lower layer wiring 3 comprising aluminium etc., an interlayer insulating film 4 comprising phosphosilicate glass and an upper wiring 5 comprising aluminium etc. are laminated on the insulating film 2. Next slits 7 are provided on the duplicated part 6 of the lower layer wiring 3 and upper layer wiring 5. The duplicated part 6 of the lower wiring 3 is provided with several sections with narrow width by several slits 7 provided. Through these procedures, any distortion produced by the difference in the coefficient of thermal expansion between the lower layer wiring 3 and the interlayer insulating film 4 may be dispersed preventing any crack in interlayer insulating film 4 from happening. |
